15th International Conference on Nitride Semiconductors (ICNS-15)

Dear Colleague,
We are excited to announce that the next International Conference on Nitride Semiconductors – ICNS-15 – will be held in the beautiful city of Malmö in Sweden from July 6–11, 2025.

ICNS-15 will present high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and feature plenary sessions, parallel topical sessions, poster sessions, and an industrial exhibition.

As the chairs of ICNS-15, we invite you to save the date for this exciting event!

Best Regards,
Vanya Darakchieva, Piotr Perlin and Lars Samuelson

https://mkon.nu/icns-15

Topics for ICNS-15

Topic I: Growth

Bulk crystal growth, III-nitride epitaxy, doping and point defects, nitride alloys, and heterostructures as well as growth methods and growth technologies, wafer processing, microstructures, nanostructures, theory, novel materials such as B and Sc containing III-nitrides, 2D materials, quaternary InAlGaN, etc.
Program Chair: Izabella Grzegory

Topic II: Characterization

Optical and electronic properties of III-nitrides, including novel materials, structural analysis, defect characterization, nanophotonics, nanoelectronics, crystal band structures, electronic states of defects, theory and simulation.
Program Chair: Filip Tuomisto

Topic III: Optical devices

Nitride based light emitters such as micro-LEDs, edge emitting laser diodes, VCSELs, multi-section laser diodes, UV-LEDs, UV-laser diodes, single photon emitters, tunnel-junction LEDs, photo-detectors, photovoltaics, nanophotonic physics and devices, frequency combs, non-linear optics, intersubband emitters, sensors, device technologies and simulations.
Program Chair: Åsa Haglund  
 

Topic IV: Electronic devices

Transistors, diodes, switches, amplifiers, power and RF applications, actuators, acoustic devices, device processing, transport and switching properties, contacts and reliability, device concepts and simulations.
Program Chair: Oliver Ambacher